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Reversed Effects of Quantum Well Numbers and Temperature on Optical Power and Wavelength of a Designed Ultraviolet Semiconductor Laser Based on GaN/InGaN
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Figure 1 from Room-Temperature Continuous-Wave Operation of InGaN Multiple Quantum Well Laser Diodes with an Asymmetric Waveguide Structure | Semantic Scholar
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Figure 1 from Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode | Semantic Scholar
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